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| (R) STPR120A HIGH EFFICIENCY FAST RECOVERY DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (max) FEATURES AND BENEFITS n n n n 1A 200 V 35 ns VERY LOW SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE FAST RECTIFIER EPITAXIAL DIODE SMA DESCRIPTION Single chip rectifier suited to Switched Mode Power Supplies and high frequency DC/DC converters. Packaged in SMA, this surface mount device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj RMS forward current Average forward current Surge non repetitive forward current Storage temperature range Maximum junction temperature TLead = 125C = 0.5 tp = 10 ms Sinusoidal Parameter Repetitive peak reverse voltage Value 200 8 1 30 - 65 to + 150 150 Unit V A A A C C THERMAL RESISTANCES Symbol Rth (j-l) Junction to lead Parameter Value 30 Unit C/W April 2000 - Ed: 3 1/5 STPR120A STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Tests Conditions Reverse leakage current Tests Conditions Tj = 25C Tj = 125C VF ** Forward voltage drop Tj = 25C Tj = 150C Pulse test : * tp = 5ms, < 2% ** tp = 380 s, < 2% Min. Typ. Max. 3 Unit A VR = VRRM 180 IF = 1 A IF = 1 A 0.69 400 0.94 0.74 V RECOVERY CHARACTERISTICS Symbol trr Tj = 25C Tests Conditions IF = 0.50 A IR = 1 A IF = 1 A VR = VRRM tFR VFP Tj = 25C Tj = 25C Irr = 0.25 A dIF/dt = 50 A/s 25 Min. Typ. Max. 25 35 25 5 V Unit ns IF = 1 A dIF/dt = 100 A/s Measured at 1 V IF = 1 A dIF/dt = 100 A/s To evaluate the maximum conduction losses use the following equation : P = 0.62 x IF(AV) + 0.12 x IF2(RMS) 2/5 STPR120A Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 = 0.05 = 0.1 = 0.2 = 0.5 Fig. 2: Peak current versus form factor. IM(A) 10 9 8 7 6 5 4 3 2 1 0 0.0 P=1.5W =1 P=1.0W P=0.5W P=0.25W IF(av) (A) 0.2 0.4 0.6 0.8 1.0 1.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 3: Average forward current versus ambient temperature (=0.5). IF(av)(A) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Fig. 4: Non repetitive surge peak forward current versus overload duration. IM(A) 6 Rth(j-a)=Rth(j-l) 5 4 Rth(j-a)=120C/W Ta=25C 3 2 1 t(s) Ta=100C Ta=125C Tamb(C) 0 25 50 75 100 125 150 0 1E-3 1E-2 1E-1 1E+0 Fig. 5: Variation of thermal impedance junction to ambient versus pulse duration (Recommended pad layout, epoxy FR4, e(Cu)=35m). Fig. 6: Forward voltage drop versus forward current (maximum values). Zth(j-a)(C/W) 200 100 IFM(A) 50.00 10.00 Tj=150C 1.00 10 Single pulse Tj=25C 0.10 tp(s) VFM(V) 1E+1 1E+2 5E+2 1 1E-3 1E-2 1E-1 1E+0 0.01 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3/5 STPR120A Fig. 7: Junction capacitance versus reverse voltage applied (typical values). C(pF) 20 F=1MHz Tj=25C Fig. 8: Recovery charges versus dIF/dt QRR(nC) 200 IF=2A 90% confidence Tj=125C 10 5 100 50 2 VR(V) 1 1 10 100 200 20 dIF/dt(A/s) 10 10 20 50 100 200 500 Fig. 9: Peak reverse recovery current versus dIF/dt. Fig. 10: Dynamic parameters versus junction temperature. QRR; IRM[Tj] / QRR; IRM[Tj=125C] 1.25 IRM(A) 20.0 10.0 IF=2A 90% confidence Tj=125C 1.00 IRM 1.0 0.75 QRR 0.50 dIF/dt(A/s) 0.1 10 20 50 100 200 500 0.25 0 25 50 Tj(C) 75 100 125 150 4/5 STPR120A PACKAGE MECHANICAL DATA SMA DIMENSIONS E1 REF. Millimeters Min. Max. 2.70 0.20 1.65 0.41 5.60 4.60 2.95 1.60 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.106 0.008 0.065 0.016 0.220 0.181 0.116 0.063 D A1 A2 b 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 E c E A1 E1 C L A2 D b L FOOT PRINT (in millimeters) n n n 1.65 n Marking : R12 Cathode band is inked Epoxy meets UL94-V0 Weight: 0.06g 1.45 2.40 1.45 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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